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Model APT8028JVR
Description Power MOSFET V is a new generation of high-voltage N-channel enhanced power MOSFET. Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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Brand: Microsemi
Packaging SOT-227
Delivery time
Packaging method
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5142) Minimum order quantity(1)
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Technical parameters/rise time: 10 ns

Technical parameters/Input capacitance (Ciss): 7700pF @25V(Vds)

Technical parameters/descent time: 8 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 500000 mW

Encapsulation parameters/installation method: Screw

Package parameters/number of pins: 4

Encapsulation parameters/Encapsulation: SOT-227

External dimensions/packaging: SOT-227

Other/Product Lifecycle: Active

Compliant with standards/RoHS standards: Non-Compliant

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IXFE39N90 IXFE39N90 IXYS Semiconductor 功能相似 ISOPLUS-227-4
ISOPLUS N-CH 900V 34A
PDF
IXFN25N90 IXFN25N90 IXYS Semiconductor 功能相似 SOT-227-4
SOT-227B N-CH 900V 25A
PDF

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