Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 220 mΩ
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 580 W
Technical parameters/drain source voltage (Vds): 900 V
Technical parameters/leakage source breakdown voltage: 900 V
Technical parameters/Continuous drain current (Ids): 34A
Technical parameters/rise time: 68 ns
Technical parameters/Input capacitance (Ciss): 13400pF @25V(Vds)
Technical parameters/descent time: 30 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 40 ℃
Technical parameters/dissipated power (Max): 580W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: ISOPLUS-227-4
External dimensions/length: 38.23 mm
External dimensions/width: 25.42 mm
External dimensions/height: 9.65 mm
External dimensions/packaging: ISOPLUS-227-4
Physical parameters/operating temperature: -40℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXFN26N90
|
IXYS Semiconductor | 功能相似 | SOT-227-4 |
IXYS SEMICONDUCTOR IXFN26N90 功率场效应管, MOSFET, N沟道, 26 A, 900 V, 300 mohm, 10 V, 5 V
|
||
IXFN27N80Q
|
IXYS Semiconductor | 功能相似 | SOT-227-4 |
IXYS SEMICONDUCTOR IXFN27N80Q 功率场效应管, MOSFET, N沟道, 27 A, 800 V, 320 mohm, 10 V, 4.5 V
|
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