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Model SI2319DS-T1-GE3
Description VISHAY SI2319DS-T1-GE3 Field effect transistor, MOSFET, P-channel, -2.3A, -40V, 750mW
Product QR code
Brand: Vishay Semiconductor
Packaging SOT-23-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
1.42  yuan 1.42yuan
5+:
$ 1.9224
25+:
$ 1.7800
50+:
$ 1.6803
100+:
$ 1.6376
500+:
$ 1.6091
2500+:
$ 1.5735
5000+:
$ 1.5593
10000+:
$ 1.5379
Quantity
5+
25+
50+
100+
500+
Price
$1.9224
$1.7800
$1.6803
$1.6376
$1.6091
Price $ 1.9224 $ 1.7800 $ 1.6803 $ 1.6376 $ 1.6091
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3264) Minimum order quantity(5)
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Technical parameters/number of pins: 3

Technical parameters/drain source resistance: 65 mΩ

Technical parameters/polarity: P-Channel

Technical parameters/dissipated power: 750 mW

Technical parameters/drain source voltage (Vds): -40.0 V

Technical parameters/Continuous drain current (Ids): -2.30 A

Technical parameters/operating temperature (Max): 150 ℃

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: SOT-23-3

External dimensions/length: 2.9 mm

External dimensions/width: 1.6 mm

External dimensions/height: 1.45 mm

External dimensions/packaging: SOT-23-3

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI2319DS-T1 SI2319DS-T1 Vishay Semiconductor 功能相似 3
MOSFET 40V 3A 0.75W
SI2319DS-T1-E3 SI2319DS-T1-E3 Vishay Semiconductor 类似代替 TO-236
TRANS MOSFET P-CH 40V 2.3A 3Pin SOT-23T/R
PDF
SI2319DS-T1-E3 SI2319DS-T1-E3 Vishay Siliconix 类似代替 SOT-23-3
TRANS MOSFET P-CH 40V 2.3A 3Pin SOT-23T/R
PDF

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