Technical parameters/drain source resistance: | 0.13 Ω |
|
Technical parameters/dissipated power: | 0.75 W |
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Technical parameters/drain source voltage (Vds): | 40 V |
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Technical parameters/Input capacitance (Ciss): | 470pF @20V(Vds) |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 750mW (Ta) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-23-3 |
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Dimensions/Length: | 3.04 mm |
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Dimensions/Packaging: | SOT-23-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Cut Tape (CT) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with standard/REACH SVHC version: | 2014/06/16 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI2319DS-T1-GE3
|
VISHAY | 类似代替 | SOT-23-3 |
Trans MOSFET P-CH 40V 2.3A 3Pin SOT-23 T/R
|
||
SI2319DS-T1-GE3
|
Vishay Semiconductor | 类似代替 | SOT-23-3 |
Trans MOSFET P-CH 40V 2.3A 3Pin SOT-23 T/R
|
||
SI2319DS-T1-GE3
|
Vishay Siliconix | 类似代替 | SOT-23-3 |
Trans MOSFET P-CH 40V 2.3A 3Pin SOT-23 T/R
|
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