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Model SI2319DS-T1-E3

Description VISHAY SI2319DS-T1-E3 晶体管, MOSFET, P沟道, -3 A, -40 V, 0.065 ohm, -10 V, -3 V

Brand: Vishay Semiconductor

Packaging TO-236

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/number of pins:	3
Technical parameters/drain source resistance:	0.065 Ω
Technical parameters/polarity:	P-Channel
Technical parameters/dissipated power:	750 mW
Technical parameters/drain source voltage (Vds):	-40.0 V
Technical parameters/Continuous drain current (Ids):	-3.00 A
Technical parameters/rise time:	15 ns
Technical parameters/Input capacitance (Ciss):	470pF @20V(Vds)
Technical parameters/descent time:	25 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	750 mW
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-236
Dimensions/Length:	3.04 mm
Dimensions/Height:	1.02 mm
Dimensions/Packaging:	TO-236
Physical parameters/operating temperature:	-55℃ ~ 150℃
Other/Packaging Methods:	Tape & Reel (TR)
Other/Manufacturing Applications:	Power Management
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2015/06/15
Customs information/ECCN code:	EAR99

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
SI2319DS-T1-GE3	VISHAY	类似代替	SOT-23-3	Trans MOSFET P-CH 40V 2.3A 3Pin SOT-23 T/R	PDF
SI2319DS-T1-GE3	Vishay Semiconductor	类似代替	SOT-23-3	Trans MOSFET P-CH 40V 2.3A 3Pin SOT-23 T/R	PDF
SI2319DS-T1-GE3	Vishay Siliconix	类似代替	SOT-23-3	Trans MOSFET P-CH 40V 2.3A 3Pin SOT-23 T/R	PDF