Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 145 mΩ
Technical parameters/polarity: P-CH
Technical parameters/dissipated power: 1.9 W
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/Continuous drain current (Ids): 2.2A
Technical parameters/rise time: 49 ns
Technical parameters/descent time: 66 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1900 mW
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 6.15 mm
External dimensions/width: 5.15 mm
External dimensions/height: 1.04 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 2500
Other/Manufacturing Applications: Power Management, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7431DP-T1-E3
|
Vishay Semiconductor | 类似代替 | PowerPAK SO |
MOSFET P-CH 200V 2.2A PPAK SO-8
|
||
SI7431DP-T1-E3
|
VISHAY | 类似代替 | PowerPAKSO-8 |
MOSFET P-CH 200V 2.2A PPAK SO-8
|
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