Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.145 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 1.9 W
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/Continuous drain current (Ids): -3.80 A
Technical parameters/rise time: 49 ns
Technical parameters/rated power (Max): 1.9 W
Technical parameters/descent time: 66 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1900 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: PowerPAKSO-8
External dimensions/packaging: PowerPAKSO-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 2500
Other/Manufacturing Applications: Power Management, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7431DP-T1-GE3
|
VISHAY | 类似代替 | SOIC-8 |
VISHAY SI7431DP-T1-GE3 晶体管, MOSFET, P沟道, -2.2 A, -200 V, 145 mohm, -10 V, -4 V
|
||
SI7431DP-T1-GE3
|
Vishay Semiconductor | 类似代替 | PowerPAK SO |
VISHAY SI7431DP-T1-GE3 晶体管, MOSFET, P沟道, -2.2 A, -200 V, 145 mohm, -10 V, -4 V
|
||
SI7431DP-T1-GE3
|
Vishay Siliconix | 类似代替 | SO-8 |
VISHAY SI7431DP-T1-GE3 晶体管, MOSFET, P沟道, -2.2 A, -200 V, 145 mohm, -10 V, -4 V
|
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