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Model SI7431DP-T1-E3
Description VISHAY SI7431DP-T1-E3 场效应管, MOSFET, P沟道, -200V, 3.8A, POWERPAK-SO, 整卷
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Brand: Vishay Semiconductor
Packaging PowerPAK SO
Delivery time
Packaging method
Standard packaging quantity 1
12.35  yuan 12.35yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5889) Minimum order quantity(1)
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Technical parameters/number of pins:

8

 

Technical parameters/drain source resistance:

0.145 Ω

 

Technical parameters/polarity:

P-Channel

 

Technical parameters/dissipated power:

1.9 W

 

Technical parameters/drain source voltage (Vds):

-200 V

 

Technical parameters/Continuous drain current (Ids):

-3.80 A

 

Technical parameters/operating temperature (Max):

150 ℃

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

PowerPAK SO

 

Dimensions/Packaging:

PowerPAK SO

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Compliant with the REACH SVHC standard:

No SVHC

 

Compliant with standard/REACH SVHC version:

2015/06/15

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SI7431DP-T1-GE3 SI7431DP-T1-GE3 VISHAY 类似代替 SOIC-8
VISHAY SI7431DP-T1-GE3 晶体管, MOSFET, P沟道, -2.2 A, -200 V, 145 mohm, -10 V, -4 V
PDF
SI7431DP-T1-GE3 SI7431DP-T1-GE3 Vishay Semiconductor 类似代替 PowerPAK SO
VISHAY SI7431DP-T1-GE3 晶体管, MOSFET, P沟道, -2.2 A, -200 V, 145 mohm, -10 V, -4 V
PDF
SI7431DP-T1-GE3 SI7431DP-T1-GE3 Vishay Siliconix 类似代替 SO-8
VISHAY SI7431DP-T1-GE3 晶体管, MOSFET, P沟道, -2.2 A, -200 V, 145 mohm, -10 V, -4 V
PDF

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