Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 1.25 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 350 mW
Technical parameters/drain source voltage (Vds): -30.0 V
Technical parameters/Continuous drain current (Ids): -385 mA, -385 A
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23
External dimensions/packaging: SOT-23
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
TP0202K
|
Vishay Siliconix | 功能相似 | SOT-23 |
Trans MOSFET P-CH 30V 0.385A 3Pin SOT-23
|
||
TP0202K
|
Vishay Semiconductor | 功能相似 |
Trans MOSFET P-CH 30V 0.385A 3Pin SOT-23
|
|||
TP0202K-T1
|
Vishay Intertechnology | 功能相似 |
Transistor
|
|||
TP0202K-T1-GE3
|
Vishay Siliconix | 完全替代 | SOT-23-3 |
MOSFET P-CH 30V 385mA SOT23-3
|
||
TP0202K-T1-GE3
|
Vishay Intertechnology | 完全替代 | SOT-23 |
MOSFET P-CH 30V 385mA SOT23-3
|
||
TP0202K-T1-GE3
|
VISHAY | 完全替代 | SOT-23-3 |
MOSFET P-CH 30V 385mA SOT23-3
|
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