Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 350 mW
Technical parameters/drain source voltage (Vds): -30.0 V
Technical parameters/Continuous drain current (Ids): -385 mA
Technical parameters/rise time: 6 ns
Technical parameters/Input capacitance (Ciss): 31pF @15V(Vds)
Technical parameters/descent time: 20 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 350mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
TP0202K
|
Vishay Siliconix | 功能相似 | SOT-23 |
Trans MOSFET P-CH 30V 0.385A 3Pin SOT-23
|
||
TP0202K
|
Vishay Semiconductor | 功能相似 |
Trans MOSFET P-CH 30V 0.385A 3Pin SOT-23
|
|||
TP0202K-T1
|
Vishay Intertechnology | 功能相似 |
Transistor
|
|||
TP0202K-T1-E3
|
Vishay Siliconix | 完全替代 | SOT-23-3 |
TRANSISTOR 385mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, ROHS COMPLIANT, TO-236, 3Pin, FET General Purpose Small Signal
|
||
|
|
VISHAY | 完全替代 | SOT-23-3 |
TRANSISTOR 385mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, ROHS COMPLIANT, TO-236, 3Pin, FET General Purpose Small Signal
|
||
TP0202K-T1-E3
|
Vishay Semiconductor | 完全替代 | SOT-23 |
TRANSISTOR 385mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, ROHS COMPLIANT, TO-236, 3Pin, FET General Purpose Small Signal
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review