Technical parameters/drain source resistance: 2.1 Ω
Technical parameters/dissipated power: 350 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23
External dimensions/packaging: SOT-23
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standard/REACH SVHC version: 2014/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
TP0202K
|
Vishay Siliconix | 功能相似 | SOT-23 |
Trans MOSFET P-CH 30V 0.385A 3Pin SOT-23
|
||
TP0202K
|
Vishay Semiconductor | 功能相似 |
Trans MOSFET P-CH 30V 0.385A 3Pin SOT-23
|
|||
TP0202K-T1
|
Vishay Intertechnology | 功能相似 |
Transistor
|
|||
TP0202K-T1-E3
|
Vishay Siliconix | 完全替代 | SOT-23-3 |
TRANSISTOR 385mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, ROHS COMPLIANT, TO-236, 3Pin, FET General Purpose Small Signal
|
||
|
|
VISHAY | 完全替代 | SOT-23-3 |
TRANSISTOR 385mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, ROHS COMPLIANT, TO-236, 3Pin, FET General Purpose Small Signal
|
||
TP0202K-T1-E3
|
Vishay Semiconductor | 完全替代 | SOT-23 |
TRANSISTOR 385mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, ROHS COMPLIANT, TO-236, 3Pin, FET General Purpose Small Signal
|
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