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Technical parameters/rise/fall time: 20ns, 15ns
Technical parameters/number of output interfaces: 2
Technical parameters/dissipated power: 0.65 W
Technical parameters/rise time: 40 ns
Technical parameters/descent time: 40 ns
Technical parameters/descent time (Max): 40 ns
Technical parameters/rise time (Max): 40 ns
Technical parameters/operating temperature (Max): 105 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 650 mW
Technical parameters/power supply voltage: 4V ~ 15V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/height: 1.5 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
UCC27325D
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TI | 类似代替 | SOIC-8 |
MOSFET & IGBT Drivers, 3A to 5A, Texas Instruments Texas Instruments 专用栅极驱动器 IC 系列适用于 MOSFET 和 IGBT 应用。 设备可提供适合与 MOSFET 和 IGBT 电源设备兼容的高电流输出，且提供各种配置和封装类型。 ### MOSFET & IGBT 驱动器，Texas Instruments
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UCC27425D
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Unitrode | 类似代替 | SOP |
TEXAS INSTRUMENTS UCC27425D 驱动器, MOSFET, 低压侧, 4V-15V电源, 4A输出, SOIC-8
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Unitrode | 类似代替 |
双4 -A峰值高速低侧功率MOSFET驱动器 DUAL 4-A PEAK HIGH SPEED LOW-SIDE POWER MOSFET DRIVERS
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UCC37325D
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TI | 类似代替 | SOIC-8 |
双4 -A峰值高速低侧功率MOSFET驱动器 DUAL 4-A PEAK HIGH SPEED LOW-SIDE POWER MOSFET DRIVERS
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