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Technical parameters/power supply voltage (DC): 4.00V (min)
Technical parameters/rise/fall time: 20ns, 15ns
Technical parameters/number of output interfaces: 2
Technical parameters/output current: 4 A
Technical parameters/dissipated power: 1140 mW
Technical parameters/rise time: 23 ns
Technical parameters/descent time: 23 ns
Technical parameters/descent time (Max): 40 ns
Technical parameters/rise time (Max): 40 ns
Technical parameters/operating temperature (Max): 70 ℃
Technical parameters/operating temperature (Min): 0 ℃
Technical parameters/dissipated power (Max): 1140 mW
Technical parameters/power supply voltage: 4V ~ 15V
Technical parameters/power supply voltage (Max): 15 V
Technical parameters/power supply voltage (Min): 4 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: 0℃ ~ 70℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
UCC27325D
|
TI | 类似代替 | SOIC-8 |
MOSFET & IGBT Drivers, 3A to 5A, Texas Instruments Texas Instruments 专用栅极驱动器 IC 系列适用于 MOSFET 和 IGBT 应用。 设备可提供适合与 MOSFET 和 IGBT 电源设备兼容的高电流输出，且提供各种配置和封装类型。 ### MOSFET & IGBT 驱动器，Texas Instruments
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UCC27425D
|
Unitrode | 类似代替 | SOP |
TEXAS INSTRUMENTS UCC27425D 驱动器, MOSFET, 低压侧, 4V-15V电源, 4A输出, SOIC-8
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