Technical parameters/power supply voltage (DC): 4.00V (min)
Technical parameters/rise/fall time: 20ns, 15ns
Technical parameters/number of output interfaces: 2
Technical parameters/dissipated power: 1.14 W
Technical parameters/rise time: 40 ns
Technical parameters/descent time: 40 ns
Technical parameters/descent time (Max): 40 ns
Technical parameters/rise time (Max): 40 ns
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 1140 mW
Technical parameters/power supply voltage: 4.5V ~ 15V
Technical parameters/power supply voltage (Max): 15 V
Technical parameters/power supply voltage (Min): 4 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 4.9 mm
External dimensions/width: 3.91 mm
External dimensions/height: 1.58 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -40℃ ~ 125℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
UCC27325DR
|
TI | 完全替代 | SOIC-8 |
双4 - A峰值高速低侧功率MOSFET驱动器 Dual 4-A Peak High-Speed Low-Side Power-MOSFET Drivers
|
||
UCC27425D
|
Unitrode | 类似代替 | SOP |
TEXAS INSTRUMENTS UCC27425D 驱动器, MOSFET, 低压侧, 4V-15V电源, 4A输出, SOIC-8
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review