Chip AI consultant
Technical parameters/rise/fall time: | 20ns, 15ns |
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Technical parameters/number of output interfaces: | 2 |
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Technical parameters/dissipated power: | 1.14 W |
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Technical parameters/rise time: | 40 ns |
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Technical parameters/output current (Max): | 4.5 A |
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Technical parameters/descent time: | 40 ns |
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Technical parameters/descent time (Max): | 40 ns |
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Technical parameters/rise time (Max): | 40 ns |
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Technical parameters/operating temperature (Max): | 125 ℃ |
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Technical parameters/operating temperature (Min): | -40 ℃ |
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Technical parameters/dissipated power (Max): | 1140 mW |
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Technical parameters/power supply voltage: | 4.5V ~ 15V |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Packaging: | SOIC-8 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
UCC27325D
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TI | 完全替代 | SOIC-8 |
MOSFET & IGBT Drivers, 3A to 5A, Texas Instruments Texas Instruments 专用栅极驱动器 IC 系列适用于 MOSFET 和 IGBT 应用。 设备可提供适合与 MOSFET 和 IGBT 电源设备兼容的高电流输出，且提供各种配置和封装类型。 ### MOSFET & IGBT 驱动器，Texas Instruments
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UCC27425D
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Unitrode | 类似代替 | SOP |
TEXAS INSTRUMENTS UCC27425D 驱动器, MOSFET, 低压侧, 4V-15V电源, 4A输出, SOIC-8
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Unitrode | 类似代替 |
双4 -A峰值高速低侧功率MOSFET驱动器 DUAL 4-A PEAK HIGH SPEED LOW-SIDE POWER MOSFET DRIVERS
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UCC37325D
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TI | 类似代替 | SOIC-8 |
双4 -A峰值高速低侧功率MOSFET驱动器 DUAL 4-A PEAK HIGH SPEED LOW-SIDE POWER MOSFET DRIVERS
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