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Model V12P10-E3/87A
Description High Current Density Surface Mount Trench MOS Barrier Schottky Rectifiers
Product QR code
Brand: Vishay Semiconductor
Packaging PowerDFN-3
Delivery time
Packaging method Tape
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5393) Minimum order quantity(1)
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Technical parameters/output current: ≤12.0 A

Technical parameters/forward voltage: 700mV @12A

Technical parameters/polarity: Standard

Technical parameters/forward voltage (Max): 700mV @12A

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: PowerDFN-3

External dimensions/packaging: PowerDFN-3

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tape

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
V12P10-M3/86A V12P10-M3/86A Vishay Semiconductor 功能相似 TO-277
VISHAY V12P10-M3/86A 肖特基整流器, 单, 100 V, 12 A, TO-277A, 3 引脚, 640 mV
PDF
V12P10-M3/87A V12P10-M3/87A Vishay Semiconductor 类似代替 TO-277-3
高电流密度表面贴装Trench MOS势垒肖特基整流器 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
PDF
V12P10-M3/87A V12P10-M3/87A VISHAY 类似代替 TO-277
高电流密度表面贴装Trench MOS势垒肖特基整流器 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
PDF
V12P10HM3/86A V12P10HM3/86A VISHAY 完全替代 TO-277
高电流密度表面贴装Trench MOS势垒肖特基整流器 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
PDF

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