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Model V12P10-M3/87A
Description 高电流密度表面贴装Trench MOS势垒肖特基整流器 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
Product QR code
Brand: Vishay Semiconductor
Packaging TO-277-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
2.52  yuan 2.52yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2762) Minimum order quantity(1)
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Technical parameters/forward voltage:

700mV @12A

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-40 ℃

 

Encapsulation parameters/installation method:

Surface Mount

 

Encapsulation parameters/Encapsulation:

TO-277-3

 

Dimensions/Length:

6.15 mm

 

Dimensions/Width:

4.75 mm

 

Dimensions/Height:

1.2 mm

 

Dimensions/Packaging:

TO-277-3

 

Physical parameters/operating temperature:

-40℃ ~ 150℃

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
V12P10-M3/86A V12P10-M3/86A Vishay Semiconductor 类似代替 TO-277
VISHAY V12P10-M3/86A 肖特基整流器, 单, 100 V, 12 A, TO-277A, 3 引脚, 640 mV
PDF
V12P10HE3/86A V12P10HE3/86A VISHAY 类似代替 TO-277
高电流密度表面贴装Trench MOS势垒肖特基整流器 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
PDF
V12P10HM3/86A V12P10HM3/86A VISHAY 类似代替 TO-277
高电流密度表面贴装Trench MOS势垒肖特基整流器 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
PDF

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