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Model V12P10-M3/86A

Description VISHAY V12P10-M3/86A 肖特基整流器, 单, 100 V, 12 A, TO-277A, 3 引脚, 640 mV

Brand: Vishay Semiconductor

Packaging TO-277

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/number of pins:	3
Technical parameters/forward voltage:	700mV @12A
Technical parameters/forward current:	12 A
Technical parameters/Maximum forward surge current (Ifsm):	200 A
Technical parameters/forward voltage (Max):	640 mV
Technical parameters/forward current (Max):	12 A
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-40 ℃
Technical parameters/operating temperature:	-40℃ ~ 150℃
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-277
Dimensions/Length:	4.75 mm
Dimensions/Width:	6.15 mm
Dimensions/Height:	1.2 mm
Dimensions/Packaging:	TO-277
Physical parameters/operating temperature:	-40℃ ~ 150℃
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Other/Manufacturing Applications:	Power Management, Commercial, Industrial, Automotive
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Customs information/ECCN code:	EAR99

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
V12P10-M3/87A	Vishay Semiconductor	类似代替	TO-277-3	高电流密度表面贴装Trench MOS势垒肖特基整流器 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier	PDF
V12P10-M3/87A	VISHAY	类似代替	TO-277	高电流密度表面贴装Trench MOS势垒肖特基整流器 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier	PDF
V12P10HE3/87A	Vishay Semiconductor	类似代替	TO-277	高电流密度表面贴装Trench MOS势垒肖特基整流器 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier	PDF
V12P10HE3/87A	VISHAY	类似代替	TO-277	高电流密度表面贴装Trench MOS势垒肖特基整流器 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier	PDF