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Model IRFBC40SPBF
Description VISHAY IRFBC40SPBF Power Field Effect Transistor, MOSFET, N-channel, 6.2 A, 600 V, 1.2 ohm, 10 V, 4 V New
Product QR code
Brand: Vishay Semiconductor
Packaging TO-263
Delivery time
Packaging method Tube
Standard packaging quantity 1
12.13  yuan 12.13yuan
5+:
$ 14.1956
50+:
$ 13.5890
200+:
$ 13.2492
500+:
$ 13.1643
1000+:
$ 13.0794
2500+:
$ 12.9823
5000+:
$ 12.9216
7500+:
$ 12.8610
Quantity
5+
50+
200+
500+
1000+
Price
$14.1956
$13.5890
$13.2492
$13.1643
$13.0794
Price $ 14.1956 $ 13.5890 $ 13.2492 $ 13.1643 $ 13.0794
Start batch production 5+ 50+ 200+ 500+ 1000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2121) Minimum order quantity(5)
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Technical parameters/rated voltage (DC): 600 V

Technical parameters/rated current: 6.20 A

Technical parameters/number of pins: 3

Technical parameters/drain source resistance: 1.2 Ω

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 130 W

Technical parameters/threshold voltage: 4 V

Technical parameters/drain source voltage (Vds): 600 V

Technical parameters/leakage source breakdown voltage: 600 V

Technical parameters/Continuous drain current (Ids): 6.20 A

Technical parameters/rise time: 18 ns

Technical parameters/descent time: 20 ns

Technical parameters/operating temperature (Max): 150 ℃

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-263

External dimensions/packaging: TO-263

Physical parameters/operating temperature: -55℃ ~ 150℃

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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