Technical parameters/rated power: 50 W
Technical parameters/drain source resistance: 4.4 Ω
Technical parameters/polarity: N-Channel
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/Continuous drain current (Ids): 2.20 A
Technical parameters/rise time: 23 ns
Technical parameters/Input capacitance (Ciss): 350pF @25V(Vds)
Technical parameters/rated power (Max): 3.1 W
Technical parameters/descent time: 25 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3100 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Minimum Packaging: 2000
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFBC20S
|
Vishay Siliconix | 完全替代 | TO-263-3 |
MOSFET N-CH 600V 2.2A D2PAK
|
||
IRFBC20S
|
Vishay Semiconductor | 完全替代 |
MOSFET N-CH 600V 2.2A D2PAK
|
|||
IRFBC20S
|
International Rectifier | 完全替代 |
MOSFET N-CH 600V 2.2A D2PAK
|
|||
IRFBC20STRLPBF
|
Vishay Intertechnology | 完全替代 | TO-263-3 |
MOSFET N-CH 600V 2.2A D2PAK
|
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