Technical parameters/dissipated power: | 3.1W (Ta), 50W (Tc) |
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Technical parameters/drain source voltage (Vds): | 600 V |
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Technical parameters/Input capacitance (Ciss): | 350pF @25V(Vds) |
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Technical parameters/dissipated power (Max): | 3.1W (Ta), 50W (Tc) |
|
Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | TO-263-3 |
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Dimensions/Packaging: | TO-263-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Obsolete |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFBC20SPBF
|
International Rectifier | 完全替代 |
MOSFET N-CH 600V 2.2A D2PAK
|
|||
IRFBC20SPBF
|
VISHAY | 完全替代 | TO-263-3 |
MOSFET N-CH 600V 2.2A D2PAK
|
||
IRFBC20SPBF
|
Vishay Siliconix | 完全替代 | TO-263-3 |
MOSFET N-CH 600V 2.2A D2PAK
|
||
IRFBC20SPBF
|
LiteOn | 完全替代 | D2PAK-2 |
MOSFET N-CH 600V 2.2A D2PAK
|
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