Technical parameters/drain source resistance: 1.2 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 130 W
Technical parameters/threshold voltage: 2 V
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/Continuous drain current (Ids): 6.20 A
Technical parameters/rise time: 18 ns
Technical parameters/descent time: 20 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263
External dimensions/packaging: TO-263
Physical parameters/operating temperature: -55℃ ~ 150℃
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STB4NK60ZT4
|
ST Microelectronics | 功能相似 | TO-263-3 |
STMICROELECTRONICS STB4NK60ZT4 功率场效应管, MOSFET, N沟道, 2 A, 600 V, 1.76 ohm, 10 V, 3.75 V
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review