Technical parameters/rated power: 0.74 W
Technical parameters/number of channels: 1
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 600 mΩ
Technical parameters/dissipated power: 740 mW
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30 V
Technical parameters/rise time: 15 ns
Technical parameters/Input capacitance (Ciss): 300 pF
Technical parameters/descent time: 25 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 740mW (Ta)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/length: 5.21 mm
External dimensions/width: 4.19 mm
External dimensions/height: 3.05 mm
External dimensions/packaging: TO-92-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bag
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N6660
|
Vishay Siliconix | 功能相似 | TO-205 |
晶体管, MOSFET, DMOS, N沟道, 410 mA, 60 V, 3 ohm, 10 V, 2 V
|
||
2N6660
|
Solid State | 功能相似 | TO-205 |
晶体管, MOSFET, DMOS, N沟道, 410 mA, 60 V, 3 ohm, 10 V, 2 V
|
||
|
|
NJS | 功能相似 |
晶体管, MOSFET, DMOS, N沟道, 410 mA, 60 V, 3 ohm, 10 V, 2 V
|
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