Technical parameters/polarity: P-CH
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 13A
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: DPAK
External dimensions/packaging: DPAK
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SIA427DJ-T1-GE3
|
Vishay Semiconductor | 功能相似 | SC-70 |
MOSFET P-CH 8V 12A SC-70-6
|
||
SIA427DJ-T1-GE3
|
Vishay Intertechnology | 功能相似 | PowerPAK-SC70-6 |
MOSFET P-CH 8V 12A SC-70-6
|
||
SIA427DJ-T1-GE3
|
VISHAY | 功能相似 | SC-70-6 |
MOSFET P-CH 8V 12A SC-70-6
|
||
SIA427DJ-T1-GE3
|
Vishay Siliconix | 功能相似 | SC-70-6 |
MOSFET P-CH 8V 12A SC-70-6
|
||
SUD45P03-15-E3
|
Vishay Semiconductor | 功能相似 | TO-252 |
MOSFET, Power; P-Channel; -30V; 20V; 13A; 4W; -55 to 150℃; 30℃/W
|
||
SUD50P04-13L-GE3
|
Vishay Semiconductor | 功能相似 | TO-252 |
MOSFET 40V 60A 93.7W 13mohm @ 10V
|
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