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Model STD55NH2LLT4
Description NSTripFET power with channel 24V -0.010ohm-40A DPAK/IPAK ultra-low gate charge MOSFET N-CHANNEL 24V - 0.010ohm - 40A DPAK/IPAK ULTRA LOW GATE CHARGE STripFET POWER MOSFET
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Brand: ST Microelectronics
Packaging TO-252-3
Delivery time
Packaging method Cut Tape (CT)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3997) Minimum order quantity(1)
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Technical parameters/rated voltage (DC): 24.0 V

Technical parameters/rated current: 40.0 A

Technical parameters/drain source resistance: 110 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 60W (Tc)

Technical parameters/drain source voltage (Vds): 24 V

Technical parameters/leakage source breakdown voltage: 24.0 V

Technical parameters/breakdown voltage of gate source: ±16.0 V

Technical parameters/Continuous drain current (Ids): 40.0 A

Technical parameters/Input capacitance (Ciss): 990pF @25V(Vds)

Technical parameters/rated power (Max): 60 W

Technical parameters/dissipated power (Max): 60W (Tc)

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: TO-252-3

External dimensions/packaging: TO-252-3

Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Cut Tape (CT)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
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N沟道24V - 0.0085ohm - 50A - DPAK / IPAK的STripFET TM III功率MOSFET N-channel 24V - 0.0085ohm - 50A - DPAK/IPAK STripFET TM III Power MOSFET
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STD50NH02LT4 STD50NH02LT4 ST Microelectronics 类似代替 TO-252-3
N沟道24V - 0.0085ohm - 50A - DPAK / IPAK的STripFET TM III功率MOSFET N-channel 24V - 0.0085ohm - 50A - DPAK/IPAK STripFET TM III Power MOSFET
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