Technical parameters/rated voltage (DC): 24.0 V
Technical parameters/rated current: 50.0 A
Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 10.5 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 60 W
Technical parameters/drain source voltage (Vds): 24 V
Technical parameters/leakage source breakdown voltage: 24 V
Technical parameters/Continuous drain current (Ids): 50.0 A
Technical parameters/rise time: 130 ns
Technical parameters/Input capacitance (Ciss): 1400pF @25V(Vds)
Technical parameters/rated power (Max): 60 W
Technical parameters/descent time: 16 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 60W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.6 mm
External dimensions/width: 6.2 mm
External dimensions/height: 2.4 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTD60N02R-1G
|
ON Semiconductor | 功能相似 | TO-251-3 |
60A,24V功率MOSFET
|
||
STD55NH2LLT4
|
ST Microelectronics | 类似代替 | TO-252-3 |
N沟道24V - 0.010ohm - 40A DPAK / IPAK超低栅极电荷的STripFET功率MOSFET N-CHANNEL 24V - 0.010ohm - 40A DPAK/IPAK ULTRA LOW GATE CHARGE STripFET POWER MOSFET
|
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