Encapsulation parameters/Encapsulation: TO-252
External dimensions/packaging: TO-252
Other/maximum source drain voltage Vds Drain Source Voltage: 30V
Other/Maximum Gate Source Voltage Vgs (±) Gate Source Voltage: 16V
Other/Maximum Drain Current Id Drain Current: 4A
Other/source drain on resistance Ω Rds D Ω/Ohmin Sou Ω/Ohmce On State Ω/Ohmesis: 0.0110Ω/OhmΩ/Ohm @2A,10V
Other/turn-on voltage Vgs (th) Gate Source Threshold Voltage: 1V
Other/dissipative power Pd Power Dissipation: 80W
Other/Specification PDF: __
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTD60N02R-1G
|
ON Semiconductor | 功能相似 | TO-251-3 |
60A,24V功率MOSFET
|
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STD55NH2LLT4
|
ST Microelectronics | 类似代替 | TO-252-3 |
N沟道24V - 0.010ohm - 40A DPAK / IPAK超低栅极电荷的STripFET功率MOSFET N-CHANNEL 24V - 0.010ohm - 40A DPAK/IPAK ULTRA LOW GATE CHARGE STripFET POWER MOSFET
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