Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 350 V
Technical parameters/maximum allowable collector current: 1A
Technical parameters/minimum current amplification factor (hFE): 40 @20mA, 10V
Technical parameters/rated power (Max): 800 mW
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 800 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SMD-4
External dimensions/packaging: SMD-4
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
JAN2N3439
|
Microsemi | 类似代替 | TO-39-3 |
此系列高频,外延平面型晶体管具有低饱和电压。 This family of high-frequency, epitaxial planar transistors feature low saturation voltage.
|
||
JAN2N3439
|
Motorola | 类似代替 |
此系列高频,外延平面型晶体管具有低饱和电压。 This family of high-frequency, epitaxial planar transistors feature low saturation voltage.
|
|||
|
|
Microsemi | 完全替代 | UA |
双极晶体管 - 双极结型晶体管(BJT) Power BJT
|
||
JANTX2N3439UA
|
Microsemi | 完全替代 | SMD-4 |
UA NPN 350V 1A
|
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