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Model JANTX2N3439UA
Description UA NPN 350V 1A
Product QR code
Brand: Microsemi
Packaging SMD-4
Delivery time
Packaging method Bulk
Standard packaging quantity 1
2747.6  yuan 2747.6yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8749) Minimum order quantity(1)
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Technical parameters/polarity:

NPN

 

Technical parameters/breakdown voltage (collector emitter):

350 V

 

Technical parameters/Maximum allowable collector current:

1A

 

Technical parameters/minimum current amplification factor (hFE):

40 @20mA, 10V

 

Technical parameters/rated power (Max):

800 mW

 

Technical parameters/operating temperature (Max):

200 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

800 mW

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

4

 

Encapsulation parameters/Encapsulation:

SMD-4

 

Dimensions/Packaging:

SMD-4

 

Physical parameters/materials:

Silicon

 

Physical parameters/operating temperature:

-65℃ ~ 200℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Bulk

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
JAN2N3439 JAN2N3439 Microsemi 类似代替 TO-39-3
此系列高频，外延平面型晶体管具有低饱和电压。 This family of high-frequency, epitaxial planar transistors feature low saturation voltage.
PDF
JAN2N3439 JAN2N3439 Motorola 类似代替
此系列高频，外延平面型晶体管具有低饱和电压。 This family of high-frequency, epitaxial planar transistors feature low saturation voltage.
JAN2N3439UA JAN2N3439UA Microsemi 完全替代 UA
双极晶体管 - 双极结型晶体管(BJT) Power BJT
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JANTXV2N3439UA JANTXV2N3439UA Microsemi 完全替代 SMD-4
UA NPN 350V 1A
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