Technical parameters/frequency: 40 MHz
Technical parameters/dissipated power: 800 mW
Technical parameters/breakdown voltage (collector emitter): 350 V
Technical parameters/minimum current amplification factor (hFE): 40 @20mA, 10V
Technical parameters/Maximum current amplification factor (hFE): 160 @20mA, 10V
Technical parameters/rated power (Max): 800 mW
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 800 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-39-3
External dimensions/packaging: TO-39-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N3439
|
ST Microelectronics | 功能相似 | TO-39 |
NTE ELECTRONICS 2N3439 Bipolar (BJT) Single Transistor, NPN, 350V, 15MHz, 1W, 1A, 160 hFE
|
||
2N3439
|
ETC | 功能相似 |
NTE ELECTRONICS 2N3439 Bipolar (BJT) Single Transistor, NPN, 350V, 15MHz, 1W, 1A, 160 hFE
|
|||
2N3439
|
CDIL | 功能相似 |
NTE ELECTRONICS 2N3439 Bipolar (BJT) Single Transistor, NPN, 350V, 15MHz, 1W, 1A, 160 hFE
|
|||
2N3439
|
Microsemi | 功能相似 | TO-39 |
NTE ELECTRONICS 2N3439 Bipolar (BJT) Single Transistor, NPN, 350V, 15MHz, 1W, 1A, 160 hFE
|
||
2N3439
|
Multicomp | 功能相似 | TO-39 |
NTE ELECTRONICS 2N3439 Bipolar (BJT) Single Transistor, NPN, 350V, 15MHz, 1W, 1A, 160 hFE
|
||
2N3439L
|
Microsemi | 功能相似 | TO-5 |
NPN小功率硅晶体管 NPN LOW POWER SILICON TRANSISTOR
|
||
JANTX2N3439UA
|
Microsemi | 类似代替 | SMD-4 |
UA NPN 350V 1A
|
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