Technical parameters/dissipated power: 800mW (Tc)
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/rise time: 70 ns
Technical parameters/descent time: 70 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 800mW (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-205
External dimensions/packaging: TO-205
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N6782
|
Semelab | 类似代替 | TO-39 |
INFINEON 2N6782 场效应管, MOSFET, N
|
||
2N6782
|
International Rectifier | 类似代替 | TO-39 |
INFINEON 2N6782 场效应管, MOSFET, N
|
||
2N6782
|
SEME-LAB | 类似代替 | TO-39 |
INFINEON 2N6782 场效应管, MOSFET, N
|
||
2N6782
|
Infineon | 类似代替 | TO-205 |
INFINEON 2N6782 场效应管, MOSFET, N
|
||
|
|
TT Electronics Resistors | 功能相似 | 3 |
Power Field-Effect Transistor, 4.5A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN
|
||
2N6788
|
Semicoa Semiconductor | 功能相似 |
Power Field-Effect Transistor, 4.5A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN
|
|||
2N6788
|
Motorola | 功能相似 |
Power Field-Effect Transistor, 4.5A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN
|
|||
|
|
TT Electronics Resistors | 功能相似 | 3 |
Power Field-Effect Transistor, 8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, TO-39, 3 PIN
|
||
2N6796
|
International Rectifier | 功能相似 | TO-205 |
Power Field-Effect Transistor, 8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, TO-39, 3 PIN
|
||
2N6796
|
Infineon | 功能相似 | TO-205 |
Power Field-Effect Transistor, 8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, TO-39, 3 PIN
|
||
2N6796
|
Semelab | 功能相似 | TO-39 |
Power Field-Effect Transistor, 8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, TO-39, 3 PIN
|
||
2N6796
|
Intersil | 功能相似 |
Power Field-Effect Transistor, 8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, TO-39, 3 PIN
|
|||
2N6796
|
ON Semiconductor | 功能相似 |
Power Field-Effect Transistor, 8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, TO-39, 3 PIN
|
|||
IRFF120
|
Infineon | 完全替代 | TO-205 |
Trans MOSFET N-CH 100V 6A 3Pin TO-39
|
||
IRFF120
|
GE | 完全替代 |
Trans MOSFET N-CH 100V 6A 3Pin TO-39
|
|||
IRFF120
|
Intersil | 完全替代 |
Trans MOSFET N-CH 100V 6A 3Pin TO-39
|
|||
IRFF120
|
International Rectifier | 完全替代 | TO-205 |
Trans MOSFET N-CH 100V 6A 3Pin TO-39
|
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