Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.18 Ω
Technical parameters/dissipated power: 25 W
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/rise time: 75 ns
Technical parameters/descent time: 45 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 25000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-205
External dimensions/packaging: TO-205
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Manufacturing Applications: Power Management, Commercial, Defense, Military and Aviation, Aerospace, Defence, Military, Defense, Military and Aviation, Commercial, Power Management
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/military grade: Yes
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
TT Electronics Resistors | 功能相似 | 3 |
场效应管, MOSFET, N沟道, 100V, 8A TO-205AF
|
||
2N6796
|
International Rectifier | 功能相似 | TO-205 |
场效应管, MOSFET, N沟道, 100V, 8A TO-205AF
|
||
2N6796
|
Infineon | 功能相似 | TO-205 |
场效应管, MOSFET, N沟道, 100V, 8A TO-205AF
|
||
2N6796
|
Semelab | 功能相似 | TO-39 |
场效应管, MOSFET, N沟道, 100V, 8A TO-205AF
|
||
2N6796
|
Intersil | 功能相似 |
场效应管, MOSFET, N沟道, 100V, 8A TO-205AF
|
|||
2N6796
|
ON Semiconductor | 功能相似 |
场效应管, MOSFET, N沟道, 100V, 8A TO-205AF
|
|||
JANTXV2N6796
|
Semicoa Semiconductor | 类似代替 | TO-39 |
Trans MOSFET N-CH 100V 8A
|
||
JANTXV2N6796
|
International Rectifier | 类似代替 | TO-39 |
Trans MOSFET N-CH 100V 8A
|
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