Technical parameters/drain source resistance: 600 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 15 W
Technical parameters/product series: IRFF110
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/leakage source breakdown voltage: 100 V
Technical parameters/Continuous drain current (Ids): 3.50 A
Technical parameters/Input capacitance (Ciss): 180pF @25V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 15000 mW
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-39
External dimensions/height: 4.54 mm
External dimensions/packaging: TO-39
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N6782-QRR1
|
Semelab | 功能相似 | BCY |
3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, TO-39, 3 PIN
|
||
|
|
Microchip | 功能相似 |
3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
|
|||
JANTXV2N6782
|
International Rectifier | 功能相似 | BCY |
3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
|
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