Technical parameters/dissipated power: 0.8 W
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 800mW (Ta), 25W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-205
External dimensions/packaging: TO-205
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N6798
|
Microsemi | 功能相似 | TO-205 |
Power Field-Effect Transistor, 5.5A I(D), 200V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN
|
||
2N6798
|
TT Electronics Resistors | 功能相似 |
Power Field-Effect Transistor, 5.5A I(D), 200V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN
|
|||
2N6798
|
Semelab | 功能相似 | TO-39 |
Power Field-Effect Transistor, 5.5A I(D), 200V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN
|
||
2N6798
|
SEME-LAB | 功能相似 | TO-39 |
Power Field-Effect Transistor, 5.5A I(D), 200V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN
|
||
2N6798
|
Infineon | 功能相似 | TO-205 |
Power Field-Effect Transistor, 5.5A I(D), 200V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN
|
||
IRFF230
|
Infineon | 功能相似 | TO-39 |
TO-39 N-CH 200V 5.5A
|
||
IRFF230
|
International Rectifier | 功能相似 | TO-39 |
TO-39 N-CH 200V 5.5A
|
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