Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 400 mΩ
Technical parameters/power consumption: 25 W
Encapsulation parameters/Encapsulation: TO-39
External dimensions/foot length: 14.22 mm
External dimensions/packaging: TO-39
Physical parameters/weight: 0.0024 kg
Compliant with standard/REACH SVHC version: 2012/06/18
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N6798
|
Microsemi | 功能相似 | TO-205 |
Trans MOSFET N-CH 200V 5.5A 3Pin TO-39
|
||
2N6798
|
TT Electronics Resistors | 功能相似 |
Trans MOSFET N-CH 200V 5.5A 3Pin TO-39
|
|||
|
2N6798
|
Semelab | 功能相似 | TO-39 |
Trans MOSFET N-CH 200V 5.5A 3Pin TO-39
|
||
2N6798
|
SEME-LAB | 功能相似 | TO-39 |
Trans MOSFET N-CH 200V 5.5A 3Pin TO-39
|
||
2N6798
|
Infineon | 功能相似 | TO-205 |
Trans MOSFET N-CH 200V 5.5A 3Pin TO-39
|
||
IRFF230
|
Infineon | 功能相似 | TO-39 |
TO-39 N-CH 200V 5.5A
|
||
IRFF230
|
International Rectifier | 功能相似 | TO-39 |
TO-39 N-CH 200V 5.5A
|
||
JANTX2N6798
|
International Rectifier | 完全替代 | TO-39 |
Power Field-Effect Transistor, 5.5A I(D), 200V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-205AF, 3 PIN
|
||
|
|
IRF | 完全替代 |
Power Field-Effect Transistor, 5.5A I(D), 200V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-205AF, 3 PIN
|
|||
|
JANTX2N6798
|
Infineon | 完全替代 | TO-205 |
Power Field-Effect Transistor, 5.5A I(D), 200V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-205AF, 3 PIN
|
||
JANTX2N6798
|
Microsemi | 完全替代 | TO-39 |
Power Field-Effect Transistor, 5.5A I(D), 200V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-205AF, 3 PIN
|
||
|
JANTXV2N6798
|
Microsemi | 功能相似 | TO-205 |
5.5A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
|
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