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Model 2N6798
Description Trans MOSFET N-CH 200V 5.5A 3Pin TO-39
Product QR code
Brand: Semelab
Packaging TO-39
Delivery time
Packaging method
Standard packaging quantity 1
209.95  yuan 209.95yuan
1+:
$ 241.4414
10+:
$ 235.1429
50+:
$ 230.3141
100+:
$ 228.6345
200+:
$ 227.3748
500+:
$ 225.6952
1000+:
$ 224.6454
2000+:
$ 223.5957
Quantity
1+
10+
50+
100+
200+
Price
$241.4414
$235.1429
$230.3141
$228.6345
$227.3748
Price $ 241.4414 $ 235.1429 $ 230.3141 $ 228.6345 $ 227.3748
Start batch production 1+ 10+ 50+ 100+ 200+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9757) Minimum order quantity(1)
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Technical parameters/rise time: 42 ns

Technical parameters/Input capacitance (Ciss): 600pF @25V(Vds)

Technical parameters/descent time: 30 ns

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 25000 mW

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-39

External dimensions/packaging: TO-39

Other/Product Lifecycle: Active

Compliant with standards/RoHS standards: Non-Compliant

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
2N6798 2N6798 Microsemi 功能相似 TO-205
Trans MOSFET N-CH 200V 5.5A 3Pin TO-39
PDF
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Trans MOSFET N-CH 200V 5.5A 3Pin TO-39
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2N6798 2N6798 SEME-LAB 功能相似 TO-39
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2N6798 2N6798 Infineon 功能相似 TO-205
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IRFF230 IRFF230 Infineon 功能相似 TO-39
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JANTX2N6798 JANTX2N6798 International Rectifier 完全替代 TO-39
Power Field-Effect Transistor, 5.5A I(D), 200V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-205AF, 3 PIN
PDF
JANTX2N6798 JANTX2N6798 IRF 完全替代
Power Field-Effect Transistor, 5.5A I(D), 200V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-205AF, 3 PIN
PDF
JANTX2N6798 JANTX2N6798 Infineon 完全替代 TO-205
Power Field-Effect Transistor, 5.5A I(D), 200V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-205AF, 3 PIN
PDF
JANTX2N6798 JANTX2N6798 Microsemi 完全替代 TO-39
Power Field-Effect Transistor, 5.5A I(D), 200V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-205AF, 3 PIN
PDF
JANTXV2N6798 JANTXV2N6798 Microsemi 功能相似 TO-205
5.5A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
PDF

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