Technical parameters/dissipated power: 25 W
Technical parameters/product series: IRFF130
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-39
External dimensions/packaging: TO-39
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N6782
|
Semelab | 功能相似 | TO-39 |
INFINEON 2N6782 场效应管, MOSFET, N
|
||
2N6782
|
International Rectifier | 功能相似 | TO-39 |
INFINEON 2N6782 场效应管, MOSFET, N
|
||
2N6782
|
SEME-LAB | 功能相似 | TO-39 |
INFINEON 2N6782 场效应管, MOSFET, N
|
||
2N6782
|
Infineon | 功能相似 | TO-205 |
INFINEON 2N6782 场效应管, MOSFET, N
|
||
|
|
IRF | 功能相似 |
每N沟道MOSFET合格MIL -PRF-五百五十七分之一万九千五百 N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557
|
|||
JANTX2N6796
|
Infineon | 功能相似 | TO-39 |
每N沟道MOSFET合格MIL -PRF-五百五十七分之一万九千五百 N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557
|
||
JANTX2N6796
|
International Rectifier | 功能相似 | TO-39 |
每N沟道MOSFET合格MIL -PRF-五百五十七分之一万九千五百 N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557
|
||
JANTXV2N6796
|
Semicoa Semiconductor | 功能相似 | TO-39 |
每N沟道MOSFET合格MIL -PRF-五百五十七分之一万九千五百 N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557
|
||
JANTXV2N6796
|
International Rectifier | 功能相似 | TO-39 |
每N沟道MOSFET合格MIL -PRF-五百五十七分之一万九千五百 N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557
|
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