Technical parameters/dissipated power: | 25000 mW |
|
Technical parameters/drain source voltage (Vds): | 100 V |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 25000 mW |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-39 |
|
Dimensions/Packaging: | TO-39 |
|
Other/Product Lifecycle: | Active |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N6782
|
Semelab | 功能相似 | TO-39 |
INFINEON 2N6782 场效应管, MOSFET, N
|
||
2N6782
|
International Rectifier | 功能相似 | TO-39 |
INFINEON 2N6782 场效应管, MOSFET, N
|
||
2N6782
|
SEME-LAB | 功能相似 | TO-39 |
INFINEON 2N6782 场效应管, MOSFET, N
|
||
2N6782
|
Infineon | 功能相似 | TO-205 |
INFINEON 2N6782 场效应管, MOSFET, N
|
||
|
|
IRF | 功能相似 |
每N沟道MOSFET合格MIL -PRF-五百五十七分之一万九千五百 N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557
|
|||
JANTX2N6796
|
Infineon | 功能相似 | TO-39 |
每N沟道MOSFET合格MIL -PRF-五百五十七分之一万九千五百 N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557
|
||
JANTX2N6796
|
International Rectifier | 功能相似 | TO-39 |
每N沟道MOSFET合格MIL -PRF-五百五十七分之一万九千五百 N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557
|
||
JANTXV2N6796
|
Semicoa Semiconductor | 功能相似 | TO-39 |
每N沟道MOSFET合格MIL -PRF-五百五十七分之一万九千五百 N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557
|
||
JANTXV2N6796
|
International Rectifier | 功能相似 | TO-39 |
每N沟道MOSFET合格MIL -PRF-五百五十七分之一万九千五百 N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557
|
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