Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/minimum current amplification factor (hFE): 40 @150mA, 10V
Technical parameters/rated power (Max): 800 mW
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-205
External dimensions/packaging: TO-205
Physical parameters/operating temperature: -55℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards:
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N1711
|
Central Semiconductor | 功能相似 | TO-39-3 |
MULTICOMP 2N1711 单晶体管 双极, NPN, 50 V, 70 MHz, 3 W, 500 mA, 35 hFE
|
||
2N1711
|
Microsemi | 功能相似 | TO-5 |
MULTICOMP 2N1711 单晶体管 双极, NPN, 50 V, 70 MHz, 3 W, 500 mA, 35 hFE
|
||
2N1711
|
ETC | 功能相似 |
MULTICOMP 2N1711 单晶体管 双极, NPN, 50 V, 70 MHz, 3 W, 500 mA, 35 hFE
|
|||
2N1711
|
CDIL | 功能相似 |
MULTICOMP 2N1711 单晶体管 双极, NPN, 50 V, 70 MHz, 3 W, 500 mA, 35 hFE
|
|||
|
2N1711
|
Semelab | 功能相似 | TO-39 |
MULTICOMP 2N1711 单晶体管 双极, NPN, 50 V, 70 MHz, 3 W, 500 mA, 35 hFE
|
||
2N2218A
|
Motorola | 功能相似 | TO-39 |
MULTICOMP 2N2218A 单晶体管 双极, NPN, 40 V, 250 MHz, 800 mW, 800 mA, 20 hFE
|
||
|
|
Microsemi | 功能相似 | TO-39 |
MULTICOMP 2N2218A 单晶体管 双极, NPN, 40 V, 250 MHz, 800 mW, 800 mA, 20 hFE
|
||
|
2N2218A
|
Infineon | 功能相似 | TO-39 |
MULTICOMP 2N2218A 单晶体管 双极, NPN, 40 V, 250 MHz, 800 mW, 800 mA, 20 hFE
|
||
2N2218A
|
CDIL | 功能相似 |
MULTICOMP 2N2218A 单晶体管 双极, NPN, 40 V, 250 MHz, 800 mW, 800 mA, 20 hFE
|
|||
|
|
Philips | 功能相似 | SOT-23 |
t-Pnp Si- Gen Pur
|
||
BCW61C
|
Infineon | 功能相似 | SOT-23-3-3 |
t-Pnp Si- Gen Pur
|
||
|
BCW61C
|
NTE Electronics | 功能相似 |
t-Pnp Si- Gen Pur
|
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