Technical parameters/polarity: | NPN |
|
Technical parameters/dissipated power: | 800 mW |
|
Technical parameters/collector breakdown voltage: | 75.0 V |
|
Technical parameters/breakdown voltage (collector emitter): | 50 V |
|
Technical parameters/minimum current amplification factor (hFE): | 100 @150mA, 10V |
|
Technical parameters/maximum current amplification factor (hFE): | 100 |
|
Technical parameters/rated power (Max): | 800 mW |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Encapsulation parameters/installation method: | Through Hole |
|
Encapsulation parameters/Encapsulation: | TO-39-3 |
|
Dimensions/Length: | 9.4 mm |
|
Dimensions/Width: | 9.4 mm |
|
Dimensions/Height: | 6.6 mm |
|
Dimensions/Packaging: | TO-39-3 |
|
Physical parameters/operating temperature: | -65℃ ~ 200℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tube |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N1711
|
Central Semiconductor | 功能相似 | TO-39-3 |
MULTICOMP 2N1711 单晶体管 双极, NPN, 50 V, 70 MHz, 3 W, 500 mA, 35 hFE
|
||
2N1711
|
Microsemi | 功能相似 | TO-5 |
MULTICOMP 2N1711 单晶体管 双极, NPN, 50 V, 70 MHz, 3 W, 500 mA, 35 hFE
|
||
2N1711
|
ETC | 功能相似 |
MULTICOMP 2N1711 单晶体管 双极, NPN, 50 V, 70 MHz, 3 W, 500 mA, 35 hFE
|
|||
2N1711
|
CDIL | 功能相似 |
MULTICOMP 2N1711 单晶体管 双极, NPN, 50 V, 70 MHz, 3 W, 500 mA, 35 hFE
|
|||
|
2N1711
|
Semelab | 功能相似 | TO-39 |
MULTICOMP 2N1711 单晶体管 双极, NPN, 50 V, 70 MHz, 3 W, 500 mA, 35 hFE
|
||
|
2N1711LEADFREE
|
Central Semiconductor | 功能相似 | TO-39 |
TO-39 NPN 50V 0.5A
|
||
JANTX2N1711
|
Microsemi | 功能相似 | TO-5 |
NPN小功率硅晶体管 NPN LOW POWER SILICON TRANSISTOR
|
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