Technical parameters/polarity: NPN
Technical parameters/dissipated power: 0.8 W
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/maximum allowable collector current: 0.5A
Technical parameters/minimum current amplification factor (hFE): 100 @150mA, 10V
Technical parameters/rated power (Max): 800 mW
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 800 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-5
External dimensions/packaging: TO-5
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N1711
|
Central Semiconductor | 功能相似 | TO-39-3 |
外延平面NPN EPITAXIAL PLANAR NPN
|
||
2N1711
|
Microsemi | 功能相似 | TO-5 |
外延平面NPN EPITAXIAL PLANAR NPN
|
||
2N1711
|
ETC | 功能相似 |
外延平面NPN EPITAXIAL PLANAR NPN
|
|||
2N1711
|
CDIL | 功能相似 |
外延平面NPN EPITAXIAL PLANAR NPN
|
|||
2N1711
|
Semelab | 功能相似 | TO-39 |
外延平面NPN EPITAXIAL PLANAR NPN
|
||
|
|
Microsemi | 完全替代 | TO-5 |
TO-5 NPN 30V 0.5A
|
||
JANTX2N1711S
|
Microchip | 完全替代 |
TO-5 NPN 30V 0.5A
|
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