Technical parameters/forward voltage: 1.5 V
Technical parameters/reverse recovery time: 150 ns
Technical parameters/forward current: 3000 mA
Technical parameters/forward current (Max): 3 A
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -65 ℃
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-35
External dimensions/packaging: DO-35
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1N5417
|
EIC | 类似代替 |
Diode Switching 200V 3A 2Pin Case 303
|
|||
1N5417
|
Semtech Corporation | 类似代替 | G-4 |
Diode Switching 200V 3A 2Pin Case 303
|
||
JANS1N5417
|
Microsemi | 完全替代 | B-Package-2 |
Diode Fast Recovery Rectifier 200V 3A 2Pin
|
||
|
|
Semtech Corporation | 完全替代 | G-4 |
Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-35, HERMETIC SEALED, 301, 2PIN
|
||
|
|
Sensitron Semiconductor | 完全替代 | DO-35 |
Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-35, HERMETIC SEALED, 301, 2PIN
|
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