Technical parameters/reverse recovery time: | 150 ns |
|
Technical parameters/forward current (Max): | 3 A |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Package parameters/number of pins: | 2 |
|
Encapsulation parameters/Encapsulation: | DO-35 |
|
Dimensions/Packaging: | DO-35 |
|
Other/Product Lifecycle: | Active |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1N5417
|
EIC | 完全替代 |
Diode Switching 200V 4.5A 2Pin Case G-4
|
|||
1N5417
|
Semtech Corporation | 完全替代 | G-4 |
Diode Switching 200V 4.5A 2Pin Case G-4
|
||
JAN1N5417
|
Microsemi | 完全替代 | B, Axial |
Diode Fast Rectifier Diode 200V 3A 2Pin Case G-4
|
||
|
|
Sensitron Semiconductor | 完全替代 | DO-35 |
Diode Fast Rectifier Diode 200V 3A 2Pin Case G-4
|
||
JANTX1N5417
|
Sensitron Semiconductor | 完全替代 | DO-35 |
Diode Fast Rectifier Diode 200V 3A 2Pin Case G-4
|
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