Technical parameters/forward voltage: 1.1V @3A
Technical parameters/reverse recovery time: 150 ns
Technical parameters/forward current (Max): 4.5 A
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: G-4
External dimensions/packaging: G-4
Physical parameters/operating temperature: -65℃ ~ 175℃
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
JAN1N5417
|
Microsemi | 完全替代 | B, Axial |
Diode Fast Rectifier Diode 200V 3A 2Pin Case G-4
|
||
|
|
Sensitron Semiconductor | 完全替代 | DO-35 |
Diode Fast Rectifier Diode 200V 3A 2Pin Case G-4
|
||
|
|
Semtech Corporation | 完全替代 | G-4 |
Diode Fast Rectifier Diode 200V 3A 2Pin Case G-4
|
||
|
|
Sensitron Semiconductor | 完全替代 | DO-35 |
Diode Fast Rectifier Diode 200V 3A 2Pin Case G-4
|
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