Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 250 V
Technical parameters/maximum allowable collector current: 1A
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 800 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-5
External dimensions/packaging: TO-5
Physical parameters/materials: Silicon
Other/Product Lifecycle: Active
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N3440
|
Microsemi | 功能相似 | TO-205 |
STMICROELECTRONICS 2N3440 单晶体管 双极, NPN, 250 V, 15 MHz, 1 W, 1 A, 160 hFE
|
||
2N3440
|
Motorola | 功能相似 | TO-205 |
STMICROELECTRONICS 2N3440 单晶体管 双极, NPN, 250 V, 15 MHz, 1 W, 1 A, 160 hFE
|
||
|
|
Harris | 功能相似 |
STMICROELECTRONICS 2N3440 单晶体管 双极, NPN, 250 V, 15 MHz, 1 W, 1 A, 160 hFE
|
|||
|
|
ON Semiconductor | 功能相似 | TO-205 |
STMICROELECTRONICS 2N3440 单晶体管 双极, NPN, 250 V, 15 MHz, 1 W, 1 A, 160 hFE
|
||
2N3440
|
NTE Electronics | 功能相似 |
STMICROELECTRONICS 2N3440 单晶体管 双极, NPN, 250 V, 15 MHz, 1 W, 1 A, 160 hFE
|
|||
JAN2N3440L
|
Microsemi | 完全替代 | TO-5 |
Trans Npn 250V 1A To5
|
||
|
|
Microchip | 功能相似 | Bulk |
JANTXV Series 250V 1A Through Hole NPN Low Power Silicon Transistor - TO-39
|
||
JANTXV2N3440
|
Microsemi | 功能相似 | TO-39 |
JANTXV Series 250V 1A Through Hole NPN Low Power Silicon Transistor - TO-39
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review