Technical parameters/breakdown voltage (collector emitter): 250 V
Technical parameters/minimum current amplification factor (hFE): 40 @20mA, 10V
Technical parameters/rated power (Max): 800 mW
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-5
External dimensions/packaging: TO-5
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
JANS2N3440L
|
Microsemi | 完全替代 | TO-5 |
TO-5 NPN 250V 1A
|
||
|
|
Microchip | 类似代替 | Bulk |
JANTXV Series 250V 1A Through Hole NPN Low Power Silicon Transistor - TO-39
|
||
JANTXV2N3440
|
Microsemi | 类似代替 | TO-39 |
JANTXV Series 250V 1A Through Hole NPN Low Power Silicon Transistor - TO-39
|
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