Technical parameters/dissipated power: 0.8 W
Technical parameters/breakdown voltage (collector emitter): 250 V
Technical parameters/minimum current amplification factor (hFE): 40 @20mA, 10V
Technical parameters/rated power (Max): 800 mW
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 800 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-205
External dimensions/packaging: TO-205
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bag
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards:
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N3440
|
Microsemi | 功能相似 | TO-205 |
TRANS NPN 250V TO-39
|
||
2N3440
|
Motorola | 功能相似 | TO-205 |
TRANS NPN 250V TO-39
|
||
|
|
Harris | 功能相似 |
TRANS NPN 250V TO-39
|
|||
|
|
ON Semiconductor | 功能相似 | TO-205 |
TRANS NPN 250V TO-39
|
||
2N3440
|
NTE Electronics | 功能相似 |
TRANS NPN 250V TO-39
|
|||
JANTX2N3440
|
Solitron Devices | 功能相似 | TO-5 |
Trans GP BJT NPN 250V 1A 3Pin TO-39
|
||
|
|
Microchip | 完全替代 | Bulk |
JANTXV Series 250V 1A Through Hole NPN Low Power Silicon Transistor - TO-39
|
||
JANTXV2N3440
|
Microsemi | 完全替代 | TO-39 |
JANTXV Series 250V 1A Through Hole NPN Low Power Silicon Transistor - TO-39
|
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