Technical parameters/number of channels: 1
Technical parameters/polarity: P-CH
Technical parameters/dissipated power: 300 W
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/Continuous drain current (Ids): 26A
Technical parameters/rise time: 33 ns
Technical parameters/Input capacitance (Ciss): 2740pF @25V(Vds)
Technical parameters/rated power (Max): 300 W
Technical parameters/descent time: 21 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 300W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/width: 9.65 mm
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXTH26P20P
|
IXYS Semiconductor | 类似代替 | TO-247-3 |
Trans MOSFET P-CH 200V 26A 3Pin(3+Tab) TO-247
|
||
IXTP26P20P
|
Littelfuse | 完全替代 |
IXTP 系列 单 P 沟道 200 V 170 mOhm 300 W 功率 Mosfet - TO-220
|
|||
IXTP26P20P
|
IXYS Semiconductor | 完全替代 | TO-220-3 |
IXTP 系列 单 P 沟道 200 V 170 mOhm 300 W 功率 Mosfet - TO-220
|
||
IXTQ26P20P
|
IXYS Semiconductor | 功能相似 | TO-3-3 |
P沟道 200V 26A
|
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