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Model IXTH26P20P
Description Trans MOSFET P-CH 200V 26A 3Pin(3+Tab) TO-247
Product QR code
Brand: IXYS Semiconductor
Packaging TO-247-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
28.54  yuan 28.54yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6442) Minimum order quantity(1)
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Technical parameters/dissipated power:

300 W

 

Technical parameters/drain source voltage (Vds):

200 V

 

Technical parameters/Input capacitance (Ciss):

2740pF @25V(Vds)

 

Technical parameters/rated power (Max):

300 W

 

Technical parameters/dissipated power (Max):

300W (Tc)

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-247-3

 

Dimensions/Packaging:

TO-247-3

 

Physical parameters/operating temperature:

-55℃ ~ 175℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tube

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IXTA26P20P IXTA26P20P IXYS Semiconductor 类似代替 TO-263-3
D2PAK P-CH 200V 26A
PDF
IXTP26P20P IXTP26P20P Littelfuse 类似代替
IXTP 系列 单 P 沟道 200 V 170 mOhm 300 W 功率 Mosfet - TO-220
IXTP26P20P IXTP26P20P IXYS Semiconductor 类似代替 TO-220-3
IXTP 系列 单 P 沟道 200 V 170 mOhm 300 W 功率 Mosfet - TO-220
PDF
IXTQ26P20P IXTQ26P20P IXYS Semiconductor 功能相似 TO-3-3
P沟道 200V 26A
PDF

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