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Model IXTQ26P20P
Description P沟道 200V 26A
Product QR code
Brand: IXYS Semiconductor
Packaging TO-3-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
10.53  yuan 10.53yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7659) Minimum order quantity(1)
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Technical parameters/dissipated power:

300W (Tc)

 

Technical parameters/drain source voltage (Vds):

200 V

 

Technical parameters/rise time:

33 ns

 

Technical parameters/Input capacitance (Ciss):

2740pF @25V(Vds)

 

Technical parameters/descent time:

21 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

300W (Tc)

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-3-3

 

Dimensions/Packaging:

TO-3-3

 

Physical parameters/operating temperature:

-55℃ ~ 175℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tube

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Model Brand Similarity Encapsulation Introduction Data manual
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IXTP 系列 单 P 沟道 200 V 170 mOhm 300 W 功率 Mosfet - TO-220
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